NAS1352C08H8 데이터시트를 통해서 부품의 기능 및 제조사와 핀배열을 확인 할 수 있습니다.
파트넘버 : NAS1352C08H8
기능 : Socket Head Cap Screws Stainless Steel-Drilled
제조사 : AIRCRAFT
The four numbers after “NAS” denote “Fine” or “Course” Threads Then to designate material add a( – )for Alloy Steel 180KSI, or a ( C )for Corrosion Resistant Steel (18-8) 80KSI, or an ( N )140-160KSI for Heat Resisting Steel per AMS5731 or 5737 (A286). After the (- , C, or N) for material, place the Diameter Designationfor your desired Shank Diameter that corresponds with your desired Thread Size.
Features for rotational security.
( H ) for Drilled Head, or
( LE ) for self locking element any type
( LL) for self locking element Strip Type
( LN ) for self locking element Pellet Type
( LB ) for self locking element Patch Type
K9F4G08U0D 데이터시트를 통해서 부품의 기능 및 제조사와 핀배열을 확인 할 수 있습니다.
파트넘버 : K9F4G08U0D, K9K8G08U0D, K9K8G08U1D
기능 : 4Gb D-die NAND Flash Memory
제조사 : Samsung
패키지 : TSOP1 타입
Offered in 512Mx8bit, the K9F4G08U0D is a 4G-bit NAND Flash Memorywith spare 128M-bit. The device isoffered in 3.3V Vcc. ItsNAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 250μs on the (2K+64)Byte page and an erase operation can be performed in typical 2ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensivesystems can take advantage of the K9F4G08U0D′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F4G08U0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
The K9F4G08U0D is a 4,224Mbit(4,429,185,024 bit) memory organized as 262,144 rows(pages) by 2,112×8 columns. Spare 64×8 columnsare located from column address of 2,048~2,111. A 2,112-byte data registeris connected to memory cell arrays accommodating data transfer between the I/O buffers and memory during page read and page program operations. The memory array is made up of 32 cells that are serially connected toform a NAND structure. Each of the 32 cells resides in a different page. A block consists of two NAND structured strings. A NAND structure consists of 32 cells. Total 1,081,344 NAND cells reside in a block. The program and read operations are executed on a page basis, while the erase operationis executed on a block basis. The memory array consists of 4,096 separately erasable128K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9F4G08U0D.